BSP135L6327

N-Channel MOSFET, 600V, 1.1A, SOT-223, 45R

N-channel MOSFET in SOT-223-4 package, featuring a 600V drain-to-source breakdown voltage and 1.1A current rating. This surface-mount component offers a maximum power dissipation of 1.8W and a low Rds On of 45 Ohms. Key switching characteristics include a turn-on delay time of 5.4ns and a fall time of 5.6ns. Operating across a wide temperature range from -55°C to 150°C, this lead-free and RoHS compliant device is supplied on tape and reel.

PackageSOT-223-4

Voltage600V

Current Rating1.1A

MountingSurface Mount

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Technical Specifications

Infineon BSP135L6327 technical specifications.

General

Package/Case	SOT-223-4
Continuous Drain Current (ID)	120mA
Current Rating	1.1A
Drain to Source Breakdown Voltage	600V
Drain to Source Resistance	45R
Drain to Source Voltage (Vdss)	600V
Fall Time	5.6ns
Gate to Source Voltage (Vgs)	20V
Input Capacitance	146pF
Lead Free	Lead Free
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	1.8W
Mount	Surface Mount
Nominal Vgs	-1.4V
Package Quantity	1000
Packaging	Tape and Reel
Polarity	N-CHANNEL
Power Dissipation	1.8W
Rds On Max	45R
Reach SVHC Compliant	Yes
RoHS Compliant	Yes
Series	SIPMOS®
Turn-Off Delay Time	28ns
Turn-On Delay Time	5.4ns
Voltage	600V
DC Rated Voltage	100V