The BSP135L6433 is an N-channel SIPMOS transistor from Infineon with a maximum operating temperature range of -55°C to 150°C. It features a drain to source breakdown voltage of 600V and a continuous drain current of 120mA. The transistor has a maximum power dissipation of 1.8W and a drain to source resistance of 45R. It is available in a TO-261-4 package and is suitable for surface mount applications.
PackageTO-261-4
MountingSurface Mount
PolarityN-CHANNEL
Power1.8W
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Technical Specifications
Infineon BSP135L6433 technical specifications.
General
| Package/Case | TO-261-4 |
| Continuous Drain Current (ID) | 120mA |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 45R |
| Drain to Source Voltage (Vdss) | 600V |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 146pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.8W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.8W |
| Rds On Max | 45R |
| Series | SIPMOS® |
| Turn-Off Delay Time | 28ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSP135L6433 Datasheet
Download the complete datasheet for Infineon BSP135L6433 to view detailed technical specifications.
No datasheet is available for this part.