N-Channel Silicon Power MOSFET, 200V Drain-Source Voltage (Vdss), 480mA Continuous Drain Current (ID), and 1.8 Ohm On-Resistance. This single-element Metal-Oxide Semiconductor FET features a 20V Gate-to-Source Voltage (Vgs) and a threshold voltage of -1.4V. Designed for surface-mount applications, it is packaged in a SOT-223 case with 4 pins and offers a maximum power dissipation of 1.8W. The component operates within a temperature range of -55°C to 150°C and is ROHS compliant.
PackageSOT-223
Power1.8W
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Technical Specifications
Infineon BSP149 technical specifications.
General
| Package/Case | SOT-223 |
| Continuous Drain Current (ID) | 480mA |
| Drain to Source Voltage (Vdss) | 200V |
| Dual Supply Voltage | 200V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 1.6mm |
| Input Capacitance | 326pF |
| Length | 6.5mm |
| Max Dual Supply Voltage | 200V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.8W |
| Nominal Vgs | -1.4V |
| Number of Channels | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 1.8W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | SIPMOS® |
| Termination | SMD/SMT |
| Threshold Voltage | -1.4V |
| Turn-Off Delay Time | 45ns |
| Turn-On Delay Time | 5.1ns |
| Width | 6.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSP149 Datasheet
Download the complete datasheet for Infineon BSP149 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.