N-Channel Power MOSFET, 200V Drain-Source Breakdown Voltage, 660mA Continuous Drain Current, 1.8 Ohm Drain-Source Resistance. Features include a 20V Gate-Source Voltage, 1.8W Power Dissipation, and a 150°C maximum operating temperature. This surface-mount device is housed in a SOT-223-4 plastic package and is RoHS compliant.
PackageSOT-223-4
Current Rating140mA
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Infineon BSP149L6327 technical specifications.
General
| Package/Case | SOT-223-4 |
| Continuous Drain Current (ID) | 660mA |
| Current Rating | 140mA |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 1.8R |
| Drain to Source Voltage (Vdss) | 200V |
| Dual Supply Voltage | 200V |
| Fall Time | 3.4ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 430pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.8W |
| Mount | Surface Mount |
| Nominal Vgs | -1.4V |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.8W |
| Radiation Hardening | No |
| Rds On Max | 1.8R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | SIPMOS® |
| Termination | SMD/SMT |
| Turn-Off Delay Time | 45ns |
| Turn-On Delay Time | 5.1ns |
| DC Rated Voltage | 200V |
| Width | 6.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSP149L6327 Datasheet
Download the complete datasheet for Infineon BSP149L6327 to view detailed technical specifications.
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