N-channel MOSFET in SOT-223-4 package, designed for surface mounting. Features a 200V drain-source breakdown voltage and a continuous drain current of 660mA. Offers a low on-resistance of 1.8 Ohms and a maximum power dissipation of 1.8W. Operates across a wide temperature range from -55°C to 150°C. This component is lead-free, RoHS compliant, and REACH SVHC compliant.
Infineon BSP149L6906 technical specifications.
| Package/Case | SOT-223-4 |
| Continuous Drain Current (ID) | 660mA |
| Current Rating | 140mA |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 1.8R |
| Drain to Source Voltage (Vdss) | 200V |
| Fall Time | 3.4ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 430pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.8W |
| Mount | Surface Mount |
| Nominal Vgs | -1.4V |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.8W |
| Radiation Hardening | No |
| Rds On Max | 1.8R |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Series | SIPMOS® |
| Turn-Off Delay Time | 45ns |
| Turn-On Delay Time | 5.1ns |
| DC Rated Voltage | 200V |
| RoHS | Compliant |
Download the complete datasheet for Infineon BSP149L6906 to view detailed technical specifications.
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