P-channel MOSFET, 60V drain-source breakdown voltage, 1.9A continuous drain current. Features 300mΩ maximum drain-source on-resistance and 1.8W maximum power dissipation. Operates across a -55°C to 150°C temperature range. Surface mountable in a SOT-223-4 package, this RoHS compliant component offers fast switching with turn-on delay of 14ns and fall time of 28ns.
Infineon BSP170PL6327 technical specifications.
| Package/Case | SOT-223-4 |
| Continuous Drain Current (ID) | 1.9A |
| Current Rating | -1.9A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 300mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 28ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 410pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.8W |
| Mount | Surface Mount |
| Nominal Vgs | -3V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.8W |
| Radiation Hardening | No |
| Rds On Max | 300mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | SIPMOS® |
| Threshold Voltage | -3V |
| Turn-Off Delay Time | 92ns |
| Turn-On Delay Time | 14ns |
| DC Rated Voltage | -60V |
| RoHS | Compliant |
Download the complete datasheet for Infineon BSP170PL6327 to view detailed technical specifications.
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