N-Channel Power MOSFET, 60V Drain-Source Voltage, 1.7A Continuous Drain Current, and 0.5 Ohm On-Resistance. This silicon Metal-Oxide Semiconductor FET features a 1.1V threshold voltage and 5.4ns turn-on delay. Packaged in a SOT-223 surface-mount plastic case, it offers a maximum power dissipation of 1.8W and operates from -55°C to 150°C.
PackageSOT-223
Power1.8W
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Technical Specifications
Infineon BSP295 technical specifications.
General
| Package/Case | SOT-223 |
| Continuous Drain Current (ID) | 1.7A |
| Drain to Source Voltage (Vdss) | 60V |
| Dual Supply Voltage | 60V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 1.6mm |
| Input Capacitance | 295pF |
| Length | 6.5mm |
| Max Dual Supply Voltage | 60V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.8W |
| Nominal Vgs | 1.1V |
| Packaging | Tape and Reel |
| Power Dissipation | 1.8W |
| Rds On Max | 300mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Threshold Voltage | 1.1V |
| Turn-Off Delay Time | 27ns |
| Turn-On Delay Time | 5.4ns |
| Width | 6.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSP295 Datasheet
Download the complete datasheet for Infineon BSP295 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.