N-channel logic-level MOSFET, SOT-223-4 package, designed for surface mount applications. Features a 60V drain-to-source breakdown voltage and a continuous drain current of 1.8A. Offers a low Rds(on) of 300mR at a nominal gate-source voltage of 1.1V. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 1.8W. This RoHS compliant component is supplied on tape and reel.
PackageSOT-223-4
Current Rating1.8A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Infineon BSP295L6327 technical specifications.
General
| Package/Case | SOT-223-4 |
| Continuous Drain Current (ID) | 1.8A |
| Current Rating | 1.8A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 300mR |
| Drain to Source Voltage (Vdss) | 60V |
| Dual Supply Voltage | 60V |
| Fall Time | 9.9ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 368pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.8W |
| Mount | Surface Mount |
| Nominal Vgs | 1.1V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.8W |
| Radiation Hardening | No |
| Rds On Max | 300mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | SIPMOS® |
| Termination | SMD/SMT |
| Threshold Voltage | 1.1V |
| Turn-Off Delay Time | 27ns |
| Turn-On Delay Time | 5.4ns |
| DC Rated Voltage | 60V |
| Width | 6.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSP295L6327 Datasheet
Download the complete datasheet for Infineon BSP295L6327 to view detailed technical specifications.
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