N-Channel Power MOSFET, 200V Vds, 0.66A continuous drain current, and 1.8 Ohm Rds On. This single-element silicon FET features a 150°C max operating temperature, 1.8W power dissipation, and a 357pF input capacitance. Designed for surface mounting in a SOT-223 plastic package, it offers fast switching with turn-on delay of 5.2ns and fall time of 19ns. This component is RoHS compliant and halogen-free.
PackageSOT-223
MountingSurface Mount
PolarityN-CHANNEL
Power1.8W
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Technical Specifications
Infineon BSP297H6327XTSA1 technical specifications.
General
| Package/Case | SOT-223 |
| Continuous Drain Current (ID) | 660mA |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 1R |
| Drain to Source Voltage (Vdss) | 200V |
| Fall Time | 19ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 1.6mm |
| Input Capacitance | 357pF |
| Lead Free | Lead Free |
| Length | 6.5mm |
| Max Dual Supply Voltage | 200V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.8W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.8W |
| Rds On Max | 1.8R |
| RoHS Compliant | Yes |
| Series | SIPMOS® |
| Turn-Off Delay Time | 49ns |
| Turn-On Delay Time | 5.2ns |
| Width | 3.5mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSP297H6327XTSA1 Datasheet
Download the complete datasheet for Infineon BSP297H6327XTSA1 to view detailed technical specifications.
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