
N-channel MOSFET in SOT-223-4 package, featuring 200V drain-source breakdown voltage and 660mA continuous drain current. Offers low 1.8 Ohm drain-source resistance (Rds On Max) and 1.4V nominal gate-source threshold voltage. Designed for surface mounting with fast switching times, including a 5.2ns turn-on delay and 3.8ns fall time. Maximum power dissipation is 1.8W, with operating temperatures ranging from -55°C to 150°C. This RoHS compliant component is supplied on tape and reel.
Infineon BSP297L6327 technical specifications.
| Package/Case | SOT-223-4 |
| Continuous Drain Current (ID) | 660mA |
| Current Rating | 660mA |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 1.8R |
| Drain to Source Voltage (Vdss) | 200V |
| Dual Supply Voltage | 200V |
| Fall Time | 3.8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 357pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.8W |
| Mount | Surface Mount |
| Nominal Vgs | 1.4V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.8W |
| Rds On Max | 1.8R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | SIPMOS® |
| Termination | SMD/SMT |
| Threshold Voltage | 1.4V |
| Turn-Off Delay Time | 49ns |
| Turn-On Delay Time | 5.2ns |
| DC Rated Voltage | 200V |
| Width | 6.7mm |
| RoHS | Compliant |
Download the complete datasheet for Infineon BSP297L6327 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
