N-channel MOSFET in SOT-223-4 package for surface mounting. Features 400V drain-source breakdown voltage (Vdss) and 500mA continuous drain current (ID). Offers low on-resistance (Rds On Max) of 3 Ohms and a maximum power dissipation of 1.8W. Operates across a wide temperature range from -55°C to 150°C. This RoHS compliant component is supplied on tape and reel.
PackageSOT-223-4
Current Rating9.7A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Infineon BSP298L6327 technical specifications.
General
| Package/Case | SOT-223-4 |
| Continuous Drain Current (ID) | 500mA |
| Current Rating | 9.7A |
| Drain to Source Breakdown Voltage | 400V |
| Drain to Source Resistance | 3R |
| Drain to Source Voltage (Vdss) | 400V |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 400pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.8W |
| Mount | Surface Mount |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.8W |
| Rds On Max | 3R |
| RoHS Compliant | Yes |
| Series | SIPMOS® |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 10ns |
| DC Rated Voltage | 60V |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSP298L6327 Datasheet
Download the complete datasheet for Infineon BSP298L6327 to view detailed technical specifications.
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