The BSP299E6327 is a SIPMOS transistor with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 1.8W and a maximum drain to source voltage of 500V. The transistor is packaged in a TO-261-4 case and is designed for surface mount applications. It is not RoHS compliant and contains lead.
PackageTO-261-4
Current Rating400mA
MountingSurface Mount
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Technical Specifications
Infineon BSP299E6327 technical specifications.
General
| Package/Case | TO-261-4 |
| Continuous Drain Current (ID) | 400mA |
| Current Rating | 400mA |
| Drain to Source Voltage (Vdss) | 500V |
| Input Capacitance | 400pF |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.8W |
| Mount | Surface Mount |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Rds On Max | 4R |
| RoHS Compliant | No |
| Series | SIPMOS® |
| DC Rated Voltage | 500V |
Compliance
| RoHS | Not Compliant |
Datasheet
Infineon BSP299E6327 Datasheet
Download the complete datasheet for Infineon BSP299E6327 to view detailed technical specifications.
No datasheet is available for this part.