BSP299L6327

N-channel logic-level MOSFET, SOT-223-4 package, offering 500V drain-to-source breakdown voltage and 400mA continuous drain current. Features low 4 Ohm drain-to-source resistance (Rds On Max) and a 3V nominal gate-to-source voltage (Vgs) for logic-level switching. Operates across a wide temperature range of -55°C to 150°C with a maximum power dissipation of 1.8W. Supplied on a tape and reel for surface mount applications, this RoHS compliant component boasts fast switching times with a turn-on delay of 8ns and fall time of 15ns.