P-channel MOSFET, 60V drain-source breakdown voltage, 1.17A continuous drain current, and 800mΩ maximum on-state resistance. This silicon metal-oxide semiconductor field-effect transistor features a 1.5V threshold voltage and 160pF input capacitance. Designed for surface mounting in a SOT-223 plastic package, it operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 1.8W. Lead and halogen-free, this component is supplied on tape and reel.
PackageSOT-223
MountingSurface Mount
PolarityP-CHANNEL
Power1.8W
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Technical Specifications
Infineon BSP315PH6327XTSA1 technical specifications.
General
| Package/Case | SOT-223 |
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 1.17A |
| Drain to Source Breakdown Voltage | -60V |
| Drain to Source Resistance | 500mR |
| Drain to Source Voltage (Vdss) | -60V |
| Fall Time | 19ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 1.6mm |
| Input Capacitance | 160pF |
| Lead Free | Lead Free |
| Length | 6.5mm |
| Max Dual Supply Voltage | -60V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.8W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| On-State Resistance | 800mR |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.8W |
| Radiation Hardening | No |
| Rds On Max | 800mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | SIPMOS® |
| Termination | SMD/SMT |
| Threshold Voltage | -1.5V |
| Turn-Off Delay Time | 32ns |
| Turn-On Delay Time | 24ns |
| Width | 3.5mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSP315PH6327XTSA1 Datasheet
Download the complete datasheet for Infineon BSP315PH6327XTSA1 to view detailed technical specifications.
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