P-channel MOSFET, 100V drain-source voltage, 680mA continuous drain current, and 1.8 Ohm drain-source resistance. This silicon, metal-oxide semiconductor FET features a SOT-223 package for surface mounting and operates across a -55°C to 150°C temperature range. With a 1.8W power dissipation and tin contact plating, it offers lead-free and halogen-free construction.
PackageSOT-223
MountingSurface Mount
PolarityP-CHANNEL
Power1.8W
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Technical Specifications
Infineon BSP316PH6327XTSA1 technical specifications.
General
| Package/Case | SOT-223 |
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 680mA |
| Drain to Source Resistance | 1.8R |
| Drain to Source Voltage (Vdss) | -100V |
| Fall Time | 25.9ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 146pF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | -100V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.8W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.8W |
| Rds On Max | 1.8R |
| RoHS Compliant | Yes |
| Series | SIPMOS® |
| Turn-Off Delay Time | 67.4ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSP316PH6327XTSA1 Datasheet
Download the complete datasheet for Infineon BSP316PH6327XTSA1 to view detailed technical specifications.
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