P-channel MOSFET in SOT-223-4 package, featuring 100V drain-source breakdown voltage and 680mA continuous drain current. Offers low 1.8 Ohm drain-source resistance (Rds On Max) and fast switching with 4.7ns turn-on delay and 7.5ns fall time. Operates from -55°C to 150°C with a maximum power dissipation of 1.8W. This surface-mount component is RoHS and Lead Free compliant.
Infineon BSP316PL6327 technical specifications.
| Package/Case | SOT-223-4 |
| Continuous Drain Current (ID) | 680mA |
| Current Rating | -680mA |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 1.8R |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 7.5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 146pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.8W |
| Mount | Surface Mount |
| Nominal Vgs | -1.5V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.8W |
| Rds On Max | 1.8R |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Series | SIPMOS® |
| Turn-Off Delay Time | 67.4ns |
| Turn-On Delay Time | 4.7ns |
| Voltage | 100V |
| DC Rated Voltage | -100V |
| RoHS | Compliant |
Download the complete datasheet for Infineon BSP316PL6327 to view detailed technical specifications.
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