
P-channel MOSFET, surface mount, SOT-223 package. Features -250V drain-source voltage, 430mA continuous drain current, and 4 ohm drain-source resistance. Operates from -55°C to 150°C with 1.8W maximum power dissipation. Includes 262pF input capacitance and fast switching times with 5.7ns turn-on delay and 67ns fall time. Halogen and lead-free, RoHS compliant.
Infineon BSP317PH6327XTSA1 technical specifications.
| Package/Case | SOT-223 |
| Continuous Drain Current (ID) | 430mA |
| Drain to Source Resistance | 3R |
| Drain to Source Voltage (Vdss) | -250V |
| Fall Time | 67ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 262pF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | -250V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.8W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.8W |
| Rds On Max | 4R |
| RoHS Compliant | Yes |
| Series | SIPMOS® |
| Turn-Off Delay Time | 254ns |
| Turn-On Delay Time | 5.7ns |
| RoHS | Compliant |
Download the complete datasheet for Infineon BSP317PH6327XTSA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
