P-channel MOSFET in SOT-223-4 package, designed for surface mounting. Features a 250V drain-to-source breakdown voltage and a continuous drain current of 430mA. Offers a low Rds(on) of 4 Ohms and a maximum power dissipation of 1.8W. Operates across a wide temperature range from -55°C to 150°C, with a nominal gate-source threshold voltage of -1.5V. Includes fast switching characteristics with turn-on delay time of 5.7ns and fall time of 11.1ns.
Infineon BSP317PL6327 technical specifications.
| Package/Case | SOT-223-4 |
| Continuous Drain Current (ID) | 430mA |
| Current Rating | -430mA |
| Drain to Source Breakdown Voltage | 250V |
| Drain to Source Resistance | 4R |
| Drain to Source Voltage (Vdss) | 250V |
| Dual Supply Voltage | -60V |
| Fall Time | 11.1ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 262pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.8W |
| Mount | Surface Mount |
| Nominal Vgs | -1.5V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.8W |
| Rds On Max | 4R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | SIPMOS® |
| Termination | SMD/SMT |
| Threshold Voltage | -1.5V |
| Turn-Off Delay Time | 254ns |
| Turn-On Delay Time | 5.7ns |
| DC Rated Voltage | -250V |
| Width | 6.7mm |
| RoHS | Compliant |
Download the complete datasheet for Infineon BSP317PL6327 to view detailed technical specifications.
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