The BSP317PL6327HTSA1 is a SIPMOS MOSFET from Infineon with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 430mA and a drain to source voltage of 250V. The device is packaged in a SOT-223-4 package and is suitable for surface mount applications. The MOSFET has a maximum power dissipation of 1.8W and is not radiation hardened.
PackageSOT-223-4
MountingSurface Mount
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Technical Specifications
Infineon BSP317PL6327HTSA1 technical specifications.
General
| Package/Case | SOT-223-4 |
| Continuous Drain Current (ID) | 430mA |
| Drain to Source Voltage (Vdss) | 250V |
| Fall Time | 67ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 262pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.8W |
| Mount | Surface Mount |
| Packaging | Cut Tape |
| Radiation Hardening | No |
| Rds On Max | 4R |
| RoHS Compliant | No |
| Series | SIPMOS® |
| Turn-Off Delay Time | 254ns |
| Turn-On Delay Time | 5.7ns |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Infineon BSP317PL6327HTSA1 Datasheet
Download the complete datasheet for Infineon BSP317PL6327HTSA1 to view detailed technical specifications.
No datasheet is available for this part.