N-channel enhancement mode MOSFET, SOT-223 package, surface mount, 100V drain-source voltage, 1.7A continuous drain current, 310mOhm maximum drain-source on-resistance. Features SIPMOS process technology, single dual drain configuration, and a maximum power dissipation of 1800mW. Operating temperature range from -55°C to 150°C.
PackageSOT-223
MountingSurface Mount
Quick Jump:
Technical Specifications
Infineon BSP372 technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | SOT |
| Package/Case | SOT-223 |
| Package Description | Small Outline Transistor |
| Lead Shape | Gull-wing |
| Pin Count | 4 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 6.5 |
| Package Width (mm) | 3.5 |
| Package Height (mm) | 1.6 |
| Seated Plane Height (mm) | 1.8(Max) |
| Pin Pitch (mm) | 2.3 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Jedec | TO-261AA |
| Configuration | Single Dual Drain |
| Category | Small Signal |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | SIPMOS |
| Maximum Drain Source Voltage | 100V |
| Maximum Gate Source Voltage | ±14V |
| Maximum Continuous Drain Current | 1.7@Ta=28CA |
| Maximum Gate Threshold Voltage | 2V |
| Maximum Drain Source Resistance | 310@5VmOhm |
| Typical Input Capacitance @ Vds | 415@25VpF |
| Maximum Power Dissipation | 1800mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Typical Output Capacitance | 80pF |
Compliance
| Cage Code | CG091 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | Yes |
| AEC Qualified | Yes |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Infineon BSP372 Datasheet
Download the complete datasheet for Infineon BSP372 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.