N-channel enhancement mode MOSFET, SOT-223 package, featuring a 100V drain-source voltage and 1.7A continuous drain current. This surface-mount transistor utilizes SIPMOS process technology and offers a low 300mOhm drain-source resistance at 10V. With a 4-pin configuration (3+Tab) and gull-wing leads, it is designed for automotive applications. Operating temperature range is -55°C to 150°C.
PackageSOT-223
MountingSurface Mount
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Technical Specifications
Infineon BSP373 technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | SOT |
| Package/Case | SOT-223 |
| Package Description | Small Outline Transistor |
| Lead Shape | Gull-wing |
| Pin Count | 4 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 6.5 |
| Package Width (mm) | 3.5 |
| Package Height (mm) | 1.6 |
| Seated Plane Height (mm) | 1.8(Max) |
| Pin Pitch (mm) | 2.3 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Jedec | TO-261AA |
| Configuration | Single Dual Drain |
| Category | Small Signal |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | SIPMOS |
| Maximum Drain Source Voltage | 100V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 1.7@Ta=28CA |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Drain Source Resistance | 300@10VmOhm |
| Typical Input Capacitance @ Vds | 400@25VpF |
| Maximum Power Dissipation | 1800mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Typical Output Capacitance | 125pF |
Compliance
| Cage Code | CG091 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | Yes |
| AEC Qualified | Yes |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Infineon BSP373 Datasheet
Download the complete datasheet for Infineon BSP373 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.