N-Channel Power MOSFET, 55V Drain-Source Voltage, 5.2A Continuous Drain Current, and 33mΩ Rds On. This silicon Metal-Oxide Semiconductor FET features a 1.39nF input capacitance and 15ns fall time, operating within a -55°C to 150°C temperature range. Packaged in a SOT-223 (TO-261-4) with 4 pins, it offers a maximum power dissipation of 1.8W and is supplied on tape and reel.
PackageTO-261-4
Current Rating5.2A
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Technical Specifications
Infineon BSP603S2L technical specifications.
General
| Package/Case | TO-261-4 |
| Continuous Drain Current (ID) | 5.2A |
| Current Rating | 5.2A |
| Drain to Source Voltage (Vdss) | 55V |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Not Halogen Free |
| Height | 1.6mm |
| Input Capacitance | 1.39nF |
| Lead Free | Contains Lead |
| Length | 6.5mm |
| Max Dual Supply Voltage | 55V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.8W |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Rds On Max | 33mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 28ns |
| Turn-On Delay Time | 10.8ns |
| DC Rated Voltage | 55V |
| Width | 3.5mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSP603S2L Datasheet
Download the complete datasheet for Infineon BSP603S2L to view detailed technical specifications.
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