N-channel MOSFET in SOT-223-4 surface mount package. Features 240V drain-to-source breakdown voltage and 350mA continuous drain current. Offers 6 Ohm drain-to-source resistance (Rds On Max) and 1.8W maximum power dissipation. Operates from -55°C to 150°C, with fast switching times including 3.5ns fall time and 3.6ns turn-on delay. Compliant with RoHS and REACH SVHC standards.
Infineon BSP88L6327 technical specifications.
| Package/Case | SOT-223-4 |
| Continuous Drain Current (ID) | 350mA |
| Current Rating | 350mA |
| Drain to Source Breakdown Voltage | 240V |
| Drain to Source Resistance | 6R |
| Drain to Source Voltage (Vdss) | 240V |
| Fall Time | 3.5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 95pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.8W |
| Mount | Surface Mount |
| Nominal Vgs | 1V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.8W |
| Radiation Hardening | No |
| Rds On Max | 6R |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Series | SIPMOS® |
| Turn-Off Delay Time | 17.9ns |
| Turn-On Delay Time | 3.6ns |
| DC Rated Voltage | 240V |
| RoHS | Compliant |
Download the complete datasheet for Infineon BSP88L6327 to view detailed technical specifications.
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