P-channel enhancement mode power MOSFET in a SOT-223 (TO-261AA) surface-mount package. Features a maximum drain-source voltage of 240V and a continuous drain current of 0.2A at 35°C ambient. Offers a low drain-source on-resistance of 20000 mOhm at 10V and typical input capacitance of 95pF at 25V. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 1700mW. The 4-pin (3+Tab) plastic package has gull-wing leads and a pin pitch of 2.3mm.
PackageSOT-223
MountingSurface Mount
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Technical Specifications
Infineon BSP92 technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | SOT |
| Package/Case | SOT-223 |
| Package Description | Small Outline Transistor |
| Lead Shape | Gull-wing |
| Pin Count | 4 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 6.5 |
| Package Width (mm) | 3.5 |
| Package Height (mm) | 1.6 |
| Seated Plane Height (mm) | 1.8(Max) |
| Pin Pitch (mm) | 2.3 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Jedec | TO-261AA |
| Configuration | Single Dual Drain |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | P |
| Number of Elements per Chip | 1 |
| Process Technology | SIPMOS |
| Maximum Drain Source Voltage | 240V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 0.2@Ta=35CA |
| Maximum Drain Source Resistance | 20000@10VmOhm |
| Typical Input Capacitance @ Vds | 95@25VpF |
| Maximum Power Dissipation | 1700mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | CG091 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Datasheet
Infineon BSP92 Datasheet
Download the complete datasheet for Infineon BSP92 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.