P-channel MOSFET with 250V drain-source breakdown voltage and 140mA continuous drain current. Features 11 Ohm drain-source resistance (Rds On Max) and a -1.5V threshold voltage. Operates across a -55°C to 150°C temperature range with 500mW maximum power dissipation. Packaged in a TO-236-3 surface-mount case with tin, matte contact plating.
PackageTO-236-3
MountingSurface Mount
PolarityP-CHANNEL
Power500mW
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Technical Specifications
Infineon BSR92PL6327HTSA1 technical specifications.
General
| Package/Case | TO-236-3 |
| Contact Plating | Tin, Matte |
| Continuous Drain Current (ID) | 140mA |
| Drain to Source Breakdown Voltage | 250V |
| Drain to Source Resistance | 11R |
| Drain to Source Voltage (Vdss) | 250V |
| Fall Time | 6.3ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.1mm |
| Input Capacitance | 109pF |
| Length | 3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 500mW |
| Rds On Max | 11R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | SIPMOS® |
| Threshold Voltage | -1.5V |
| Turn-Off Delay Time | 75ns |
| Turn-On Delay Time | 6.4ns |
| Width | 1.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSR92PL6327HTSA1 Datasheet
Download the complete datasheet for Infineon BSR92PL6327HTSA1 to view detailed technical specifications.
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