P-channel MOSFET, 60V drain-source voltage, 0.17A continuous drain current, and 360mW power dissipation. Features a SOT-23 (TO-236AA) package with 3 gull-wing leads for surface mounting. SIPMOS process technology ensures enhancement mode operation with a typical gate threshold voltage of 2V. Operating temperature range from -55°C to 150°C.
PackageSOT-23
MountingSurface Mount
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Technical Specifications
Infineon BSS 84 P technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | SOT-23 |
| Package/Case | SOT-23 |
| Package Description | Small Outline Transistor |
| Lead Shape | Gull-wing |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 2.9 |
| Package Width (mm) | 1.3 |
| Package Height (mm) | 1(Max) |
| Seated Plane Height (mm) | 1 |
| Pin Pitch (mm) | 0.95 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Jedec | TO-236AA |
| Configuration | Single |
| Category | Small Signal |
| Channel Mode | Enhancement |
| Channel Type | P |
| Number of Elements per Chip | 1 |
| Process Technology | SIPMOS |
| Maximum Drain Source Voltage | 60V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 0.17A |
| Maximum Gate Threshold Voltage | 2V |
| Maximum Drain Source Resistance | 8000@10VmOhm |
| Typical Gate Charge @ Vgs | 1@10VnC |
| Typical Gate Charge @ 10V | 1nC |
| Typical Input Capacitance @ Vds | 15@25VpF |
| Maximum Power Dissipation | 360mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Typical Output Capacitance | 6pF |
Compliance
| Cage Code | CG091 |
| EU RoHS | Yes |
| HTS Code | 8541210095 |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | Yes |
| AEC Qualified | Yes |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Infineon BSS 84 P Datasheet
Download the complete datasheet for Infineon BSS 84 P to view detailed technical specifications.
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