N-Channel Silicon Metal-oxide Semiconductor FET for surface mount applications. Features 100V drain-to-source breakdown voltage, 170mA continuous drain current, and 6 Ohm drain-to-source resistance. Operates with a gate-to-source voltage up to 20V and a nominal threshold voltage of 1.8V. Offers fast switching with turn-on delay time of 2.7ns and fall time of 3.1ns. Packaged in a 3-pin SOT-23 plastic package, supplied on tape and reel. RoHS compliant.
PackageSOT-23-3
MountingSurface Mount
PolarityN-CHANNEL
Power360mW
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Technical Specifications
Infineon BSS119L6327 technical specifications.
General
| Package/Case | SOT-23-3 |
| Continuous Drain Current (ID) | 170mA |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 6R |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 3.1ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 78pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 360mW |
| Mount | Surface Mount |
| Nominal Vgs | 1.8V |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 360mW |
| Radiation Hardening | No |
| Rds On Max | 6R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | SIPMOS® |
| Threshold Voltage | 1.8V |
| Turn-Off Delay Time | 9.3ns |
| Turn-On Delay Time | 2.7ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSS119L6327 Datasheet
Download the complete datasheet for Infineon BSS119L6327 to view detailed technical specifications.
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