N-Channel Silicon Metal-Oxide Semiconductor FET for surface mounting in a 3-pin plastic package. Features 100V drain-to-source breakdown voltage, 170mA continuous drain current, and 6 Ohm drain-to-source resistance. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 360mW. Includes a threshold voltage of 1.4V and input capacitance of 69pF.
PackageSOT-23-3
Current Rating170mA
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Infineon BSS123L6327 technical specifications.
General
Package/Case
SOT-23-3
Continuous Drain Current (ID)
170mA
Current Rating
170mA
Drain to Source Breakdown Voltage
100V
Drain to Source Resistance
6R
Drain to Source Voltage (Vdss)
100V
Fall Time
3.1ns
Gate to Source Voltage (Vgs)
20V
Height
1.1mm
Input Capacitance
69pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
360mW
Mount
Surface Mount
Nominal Vgs
1.4V
Number of Channels
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
360mW
Rds On Max
6R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
SIPMOS®
Threshold Voltage
1.4V
Turn-Off Delay Time
9.9ns
Turn-On Delay Time
2.7ns
DC Rated Voltage
100V
Compliance
RoHS
Compliant
Datasheet
Infineon BSS123L6327 Datasheet
Download the complete datasheet for Infineon BSS123L6327 to view detailed technical specifications.
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