N-Channel Silicon Metal-oxide Semiconductor FET, a single-element JFET designed for surface mounting in a SOT-23 plastic package. Features a continuous drain current of 21mA and a drain-to-source voltage of 600V. Offers a maximum gate-to-source voltage of 20V and a low input capacitance of 28pF. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 500mW. This component is RoHS and REACH SVHC compliant, with tin matte contact plating and halogen-free construction.
PackageSOT-23
MountingSurface Mount
Power500mW
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Technical Specifications
Infineon BSS127H6327XTSA2 technical specifications.
General
| Package/Case | SOT-23 |
| Contact Plating | Tin, Matte |
| Continuous Drain Current (ID) | 21mA |
| Drain to Source Voltage (Vdss) | 600V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 28pF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 600V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 500mW |
| Rds On Max | 500R |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Series | SIPMOS® |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSS127H6327XTSA2 Datasheet
Download the complete datasheet for Infineon BSS127H6327XTSA2 to view detailed technical specifications.
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