N-channel MOSFET transistor, surface mount SOT package, featuring 50V drain-to-source breakdown voltage and 220mA continuous drain current. Offers low 1.8 Ohm drain-to-source resistance, 5ns turn-on delay, and 12ns turn-off delay. Operates within a -55°C to 150°C temperature range with 360mW power dissipation. RoHS compliant.
PackageSOT
MountingSurface Mount
Power360mW
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Technical Specifications
Infineon BSS138 technical specifications.
General
| Package/Case | SOT |
| Continuous Drain Current (ID) | 220mA |
| Drain to Source Breakdown Voltage | 50V |
| Drain to Source Resistance | 1.8R |
| Drain to Source Voltage (Vdss) | 50V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Power Dissipation | 360mW |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 12ns |
| Turn-On Delay Time | 5ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSS138 Datasheet
Download the complete datasheet for Infineon BSS138 to view detailed technical specifications.
No datasheet is available for this part.