Infineon
BSS138WL6433
Small Signal Field-Effect Transistor, 0.28A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3
PackageSOT-323-3
MountingSurface Mount
PolarityN-CHANNEL
Power500mW
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Technical Specifications
Infineon BSS138WL6433 technical specifications.
General
| Package/Case | SOT-323-3 |
| Continuous Drain Current (ID) | 280mA |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 3.5R |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 3ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 43pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Mount | Surface Mount |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 500mW |
| Rds On Max | 3.5R |
| RoHS Compliant | Yes |
| Series | SIPMOS® |
| Turn-Off Delay Time | 6.7ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSS138WL6433 Datasheet
Download the complete datasheet for Infineon BSS138WL6433 to view detailed technical specifications.
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