P-channel JFET, surface mount, featuring 250V drain-to-source breakdown voltage and 190mA continuous drain current. This silicon MOSFET offers 12Ω drain-to-source resistance and 1W maximum power dissipation. Operates across a wide temperature range from -55°C to 150°C, with fast switching characteristics including a 4.7ns turn-on delay. Packaged in a SOT-89-4 for tape and reel distribution, this component is lead-free and RoHS compliant.
PackageSOT-89-4
Current Rating-190mA
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Infineon BSS192PL6327 technical specifications.
General
| Package/Case | SOT-89-4 |
| Continuous Drain Current (ID) | 190mA |
| Current Rating | -190mA |
| Drain to Source Breakdown Voltage | 250V |
| Drain to Source Resistance | 12R |
| Drain to Source Voltage (Vdss) | 250V |
| Fall Time | 5.2ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 104pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Nominal Vgs | -1.5V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1W |
| Rds On Max | 12R |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Series | SIPMOS® |
| Turn-Off Delay Time | 72ns |
| Turn-On Delay Time | 4.7ns |
| DC Rated Voltage | -250V |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSS192PL6327 Datasheet
Download the complete datasheet for Infineon BSS192PL6327 to view detailed technical specifications.
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