
P-channel, single-element silicon MOSFET for surface mount applications. Features 60V drain-to-source breakdown voltage and 170mA continuous drain current. Offers low 8 Ohm drain-to-source resistance (Rds On Max) and fast switching times with turn-on delay of 6.7ns and fall time of 16.2ns. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 360mW. Packaged in a SOT-23-3 plastic package, this RoHS compliant component is supplied on tape and reel.
Infineon BSS84PL6327 technical specifications.
| Package/Case | SOT-23-3 |
| Continuous Drain Current (ID) | 170mA |
| Current Rating | -170mA |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 8R |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 16.2ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 19pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 360mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 360mW |
| Radiation Hardening | No |
| Rds On Max | 8R |
| RoHS Compliant | Yes |
| Series | SIPMOS® |
| Turn-Off Delay Time | 8.6ns |
| Turn-On Delay Time | 6.7ns |
| Voltage | 60V |
| DC Rated Voltage | -60V |
| RoHS | Compliant |
Download the complete datasheet for Infineon BSS84PL6327 to view detailed technical specifications.
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