N-Channel Power MOSFET featuring a 32A continuous drain current (I(D)) and a 25V drain-source voltage (V(DS)). This single-element silicon Metal-Oxide-Semiconductor Field-Effect Transistor offers a low on-resistance of 0.0017 ohms. Designed with 3 terminals and a dual terminal position, it is housed in a TSDSON-8FL package with 8 pins.
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Technical Specifications
Infineon BSZ013NE2LS5IATMA1 technical specifications.
General
| Number of Terminals | 3 |
| Terminal Position | DUAL |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Lead Free | Yes |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Infineon BSZ013NE2LS5IATMA1 Datasheet
Download the complete datasheet for Infineon BSZ013NE2LS5IATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.