N-Channel Power MOSFET featuring 25V drain-source voltage and 22A continuous drain current. This single-element silicon Metal-oxide Semiconductor FET offers a low 1.8mR on-state resistance and a maximum power dissipation of 69W. Designed for surface mounting in a TSDSON-8 plastic package, it operates from -55°C to 150°C and is RoHS compliant. Key switching characteristics include a 3.6ns fall time, 5.2ns turn-on delay, and 25ns turn-off delay.
MountingSurface Mount
Power2.1W
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Technical Specifications
Infineon BSZ018NE2LSIATMA1 technical specifications.
General
| Continuous Drain Current (ID) | 22A |
| Drain to Source Voltage (Vdss) | 25V |
| Fall Time | 3.6ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 2.5nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 25V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 69W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| On-State Resistance | 1.8mR |
| Package Quantity | 5000 |
| Packaging | Tape and Reel |
| Power Dissipation | 2.1W |
| Rds On Max | 1.8mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 5.2ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSZ018NE2LSIATMA1 Datasheet
Download the complete datasheet for Infineon BSZ018NE2LSIATMA1 to view detailed technical specifications.
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