N-channel power MOSFET featuring 40V drain-source voltage and 40A continuous drain current. Offers low on-state resistance of 3.4mΩ (max) and 2.7mΩ (typ). Designed for surface mounting in a TSDSON-8 package, this silicon metal-oxide semiconductor FET operates from -55°C to 150°C with a maximum power dissipation of 52W. Input capacitance is 1.8nF, and it is RoHS compliant.
MountingSurface Mount
Power52W
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Technical Specifications
Infineon BSZ034N04LSATMA1 technical specifications.
General
| Continuous Drain Current (ID) | 40A |
| Drain to Source Resistance | 2.7mR |
| Drain to Source Voltage (Vdss) | 40V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 1.8nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 40V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 52W |
| Mount | Surface Mount |
| On-State Resistance | 3.4mR |
| Package Quantity | 5000 |
| Packaging | Tape and Reel |
| Power Dissipation | 52W |
| Rds On Max | 3.4mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSZ034N04LSATMA1 Datasheet
Download the complete datasheet for Infineon BSZ034N04LSATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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