N-channel power MOSFET featuring 60V drain-source voltage and 17A continuous drain current. This single-element silicon Metal-Oxide-Semiconductor Field-Effect Transistor offers a low on-resistance of 0.004 ohms. Designed with 3 terminals and a dual terminal position, it operates across a wide temperature range from -55°C.
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Technical Specifications
Infineon BSZ040N06LS5ATMA1 technical specifications.
General
| Number of Terminals | 3 |
| Min Operating Temperature | -55 |
| Terminal Position | DUAL |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Infineon BSZ040N06LS5ATMA1 Datasheet
Download the complete datasheet for Infineon BSZ040N06LS5ATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.