Infineon
BSZ042N06NS
Power Field-Effect Transistor, 40A I(D), 60V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8
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Technical Specifications
Infineon BSZ042N06NS technical specifications.
General
Continuous Drain Current (ID)
19A
Drain to Source Voltage (Vdss)
60V
Fall Time
6ns
Gate to Source Voltage (Vgs)
20V
Halogen Free
Halogen Free
Input Capacitance
2nF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Package Quantity
1
Packaging
Tape and Reel
Rds On Max
4.2mR
RoHS Compliant
Yes
Series
OptiMOS™
Turn-Off Delay Time
19ns
Turn-On Delay Time
10ns
Compliance
RoHS
Compliant
Datasheet
Infineon BSZ042N06NS Datasheet
Download the complete datasheet for Infineon BSZ042N06NS to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.