BSZ0506NSATMA1

N-Channel Power MOSFET featuring 30V drain-source voltage and a low on-resistance of 0.0053 ohms at 15A continuous drain current. This single-element silicon Metal-Oxide-Semiconductor Field-Effect Transistor is designed for efficient power switching applications. It utilizes a TSDSON-8FL package with 8 pins, offering a 3-terminal configuration with dual terminal positions.