Infineon
BSZ050N03MSG
Power Field-Effect Transistor, 40A I(D), 30V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8
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Technical Specifications
Infineon BSZ050N03MSG technical specifications.
General
| Continuous Drain Current (ID) | 40A |
| Fall Time | 3.2ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 1.1mm |
| Input Capacitance | 3.6nF |
| Length | 3.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 48W |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Rds On Max | 4.5mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 26ns |
| Turn-On Delay Time | 6.7ns |
| Width | 3.4mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSZ050N03MSG Datasheet
Download the complete datasheet for Infineon BSZ050N03MSG to view detailed technical specifications.
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