N-Channel Power MOSFET featuring 30V drain-source voltage and 12A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low on-resistance of 0.0086 ohms. Designed for surface mounting, it operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 26W. Contact plating is tin, and the component is RoHS compliant.
MountingSurface Mount
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Technical Specifications
Infineon BSZ065N03LSATMA1 technical specifications.
General
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Voltage (Vdss) | 30V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 26W |
| Mount | Surface Mount |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 2V |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSZ065N03LSATMA1 Datasheet
Download the complete datasheet for Infineon BSZ065N03LSATMA1 to view detailed technical specifications.
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