The Infineon BSZ086P03NS3EGATMA1 is a surface mount N-channel MOSFET with a maximum continuous drain current of 13.5A and a maximum drain to source voltage of -30V. It operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 69W. The device features a threshold voltage of -2.5V and a maximum Rds on of 8.6mR. It is packaged in a small outline S-PDSO-N5 package and is compliant with RoHS regulations.
MountingSurface Mount
Power69W
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Technical Specifications
Infineon BSZ086P03NS3EGATMA1 technical specifications.
General
| Contact Plating | Tin, Matte |
| Continuous Drain Current (ID) | 13.5A |
| Drain to Source Voltage (Vdss) | -30V |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 25V |
| Halogen Free | Halogen Free |
| Input Capacitance | 4.785nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | -30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 69W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Cut Tape |
| Power Dissipation | 69W |
| Rds On Max | 8.6mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Threshold Voltage | -2.5V |
| Turn-Off Delay Time | 35ns |
| Turn-On Delay Time | 16ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSZ086P03NS3EGATMA1 Datasheet
Download the complete datasheet for Infineon BSZ086P03NS3EGATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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