High-performance N-channel Power MOSFET featuring a 30V drain-source voltage and 40A continuous drain current. This surface-mount device offers a low 2.6mΩ Rds(on) and is designed for efficient power switching with fast switching times, including a 3.6ns fall time and 4.2ns turn-on delay. Operating across a wide temperature range from -55°C to 150°C, it supports up to 48W power dissipation and is RoHS compliant.
MountingSurface Mount
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Technical Specifications
Infineon BSZ0902NSATMA1 technical specifications.
General
| Continuous Drain Current (ID) | 40A |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 3.6ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 1.7nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 48W |
| Mount | Surface Mount |
| Packaging | Cut Tape |
| Rds On Max | 2.6mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 21ns |
| Turn-On Delay Time | 4.2ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSZ0902NSATMA1 Datasheet
Download the complete datasheet for Infineon BSZ0902NSATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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