Infineon
BSZ097N04LSG
Power Field-Effect Transistor, 12A I(D), 40V, 0.0142ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8
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Technical Specifications
Infineon BSZ097N04LSG technical specifications.
General
| Continuous Drain Current (ID) | 40A |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 2.8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 1.1mm |
| Input Capacitance | 1.9nF |
| Length | 3.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 35W |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Rds On Max | 9.7mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 16ns |
| Turn-On Delay Time | 3.5ns |
| Width | 3.4mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSZ097N04LSG Datasheet
Download the complete datasheet for Infineon BSZ097N04LSG to view detailed technical specifications.
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