The BSZ100N06LS3G is a 60V N-channel MOSFET with a maximum continuous drain current of 20A and a maximum power dissipation of 50W. It has a maximum Rds on resistance of 10mR and a threshold voltage of 1.7V. The device is available in a TSDSON-8 package and is lead-free and RoHS compliant. It operates over a temperature range of -55°C to 150°C and has a maximum input capacitance of 3.5nF. The BSZ100N06LS3G is part of the OptiMOS series from Infineon.
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Technical Specifications
Infineon BSZ100N06LS3G technical specifications.
General
| Continuous Drain Current (ID) | 20A |
| Drain to Source Voltage (Vdss) | 60V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 1.1mm |
| Input Capacitance | 3.5nF |
| Lead Free | Lead Free |
| Length | 3.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 50W |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Rds On Max | 10mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Threshold Voltage | 1.7V |
| Turn-Off Delay Time | 19ns |
| Turn-On Delay Time | 8ns |
| Width | 3.4mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSZ100N06LS3G Datasheet
Download the complete datasheet for Infineon BSZ100N06LS3G to view detailed technical specifications.
No datasheet is available for this part.