Infineon
BSZ100N06LS3GXT
Power Field-Effect Transistor, 11A I(D), 60V, 0.0179ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8
MountingSurface Mount
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Technical Specifications
Infineon BSZ100N06LS3GXT technical specifications.
General
| Contact Plating | Tin, Matte |
| Continuous Drain Current (ID) | 11A |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSZ100N06LS3GXT Datasheet
Download the complete datasheet for Infineon BSZ100N06LS3GXT to view detailed technical specifications.
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