N-channel Power MOSFET with 100V Drain-to-Source Voltage (Vdss) and 40A Continuous Drain Current (ID). Features low 15mΩ Drain-to-Source On-Resistance (Rds On Max) and 1.7V Threshold Voltage. Operates from -55°C to 150°C with a maximum power dissipation of 63W. Surface mountable in a tape and reel package, with tin contact plating and halogen-free construction.
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Infineon BSZ150N10LS3GATMA1 technical specifications.
General
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 40A |
| Drain to Source Resistance | 15mR |
| Drain to Source Voltage (Vdss) | 100V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 2.5nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 100V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 63W |
| Mount | Surface Mount |
| Package Quantity | 5000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 15mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Threshold Voltage | 1.7V |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSZ150N10LS3GATMA1 Datasheet
Download the complete datasheet for Infineon BSZ150N10LS3GATMA1 to view detailed technical specifications.
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