Dual N-channel and P-channel MOSFET with 20V drain-source voltage and 5.1A continuous drain current. Features a low on-resistance of 0.055 ohms, enabling efficient power switching. This silicon Metal-oxide Semiconductor FET is housed in a GREEN, PLASTIC TSDSON-8 package with 5 terminals in a DUAL configuration.
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Technical Specifications
Infineon BSZ15DC02KDHXTMA1 technical specifications.
General
| Number of Terminals | 5 |
| Terminal Position | DUAL |
| Number of Elements | 2 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Infineon BSZ15DC02KDHXTMA1 Datasheet
Download the complete datasheet for Infineon BSZ15DC02KDHXTMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.