N-channel Power MOSFET featuring 250V drain-source voltage and 10.9A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low on-resistance of 165mΩ at a gate-source voltage of 10V. With a maximum power dissipation of 62.5W and operating temperatures from -55°C to 150°C, it is suitable for surface mount applications. Input capacitance is rated at 920pF, and contact plating is tin.
MountingSurface Mount
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Technical Specifications
Infineon BSZ16DN25NS3GATMA1 technical specifications.
General
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 10.9A |
| Drain to Source Voltage (Vdss) | 250V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 920pF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 250V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 62.5W |
| Mount | Surface Mount |
| Rds On Max | 165mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSZ16DN25NS3GATMA1 Datasheet
Download the complete datasheet for Infineon BSZ16DN25NS3GATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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