N-channel enhancement mode power MOSFET, OptiMOS technology, 150V drain-source voltage, 13A continuous drain current, and 90mΩ maximum drain-source resistance at 10V. Features an 8-pin TSDSON EP surface-mount package with a 3.3mm x 3.3mm footprint and 0.65mm pin pitch. Single quad drain triple source configuration, suitable for automotive applications, with a maximum power dissipation of 38000mW and an operating temperature range of -55°C to 150°C.
PackageTSDSON EP
MountingSurface Mount
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Technical Specifications
Infineon BSZ900N15NS3 G technical specifications.
General
Basic Package Type
Non-Lead-Frame SMT
Package Family Name
SON
Package/Case
TSDSON EP
Lead Shape
No Lead
Pin Count
8
PCB
8
Package Length (mm)
3.3
Package Width (mm)
3.3
Package Height (mm)
1
Seated Plane Height (mm)
1
Pin Pitch (mm)
0.65
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single Quad Drain Triple Source
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
OptiMOS
Maximum Drain Source Voltage
150V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
13A
Maximum Drain Source Resistance
90@10VmOhm
Typical Gate Charge @ Vgs
5@10VnC
Typical Gate Charge @ 10V
5nC
Typical Input Capacitance @ Vds
380@75VpF
Maximum Power Dissipation
38000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
CG091
EU RoHS
Yes with Exemption
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
Yes
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Infineon BSZ900N15NS3 G Datasheet
Download the complete datasheet for Infineon BSZ900N15NS3 G to view detailed technical specifications.
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